| PART |
Description |
Maker |
| RTOP |
Power Resistors for Mounting onto a Heatsink Featuring Up to 4 different ohmic values in the same case, Non inductive, Easy mounting, Low Thermal Radiation of the case, Standard Isotop case (SOT 227 B)
|
Vishay
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
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Advanced Power Technology
Microsemi, Corp.
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 593D |
Solid Tantalum Chip Capacitors, Tantamount? Commercial, Low ESR, Designed for Switch Mode Power Supplies & Converters, Molded Case Available in Three Case Codes, Automatic Pick & Place Compatible, Meets EIA 53
|
Vishay
|
| BC373 BC372 ON0148 |
High Voltage Darlington Transistors
From old datasheet system
CASE 29-4, STYLE 1 TO-2 (TO-26AA)
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON20 |
From old datasheet system
CASE 3188, STYLE 10 SOT3 (TO?36AB
JFET Switching Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BF422 BF420 ON0207 |
CASE 29-11, STYLE 14 TO-2 (TO-26AA)
From old datasheet system
High Voltage Transistors(NPN Silicon)
|
http://
ONSEMI[ON Semiconductor]
|
| GS6333UR18D2 GS6333UR19D1 GS6333UR19D2 GS6333UR19D |
D-Subminiature Connector; Gender:Female; No. of Contacts:9; Contact Termination:Crimp; D Sub Shell Size:DB9; Body Material:Steel; Body Plating:Zinc; Contact Plating:Gold RoHS Compliant: Yes
CABLE ASSEMBLY; SMA MALE TO N FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; 12" CABLE LENGTH; 3引脚，低功率，P复位电路
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 16V; Case Size: 10x12.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 16V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 16V; Case Size: 18x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 16V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 1000uF; Voltage: 16V; Case Size: 12.5x25 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 16V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 16V; Case Size: 8x11.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 10V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 4700uF; Voltage: 10V; Case Size: 18x35.5 mm; Packaging: Bulk
3 Pin, Low-Power, P Reset Circuits
IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3, SOT-23, 3 PIN, Power Management Circuit
|
VISHAY SEMICONDUCTORS
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| TIP41C TIP42B TIP41A TIP42C TIP42A TIP41B ON2987 |
POWER TRANSISTORS COMPLEMENTARY SILICON 6 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
6 AMPERE POWER TRANSISTORS
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
http://
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
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